Negative differential resistance in nanotube devices
arXiv:cond-mat/0010456 · doi:10.1103/PhysRevLett.85.4767
Abstract
Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions, calculating quantum transport through the self-consistent potential within a tight-binding approximation. The undoped junctions in particular may be suitable for device integration.
4 pages, 4 figures, to appear in Physical Review Letters
References in corpus (2)
Cited by in corpus (12)
- Terahertz Science and Technology of Carbon Nanomaterials
- Photocurrents in nanotube junctions
- Multiple Functionality in Nanotube Transistors
- Stochastic Heterostructures in B/N-Doped Carbon Nanotubes
- A Fully Tunable Single-Walled Carbon Nanotube Diode
- Strong spin-dependent negative differential resistance in composite graphene superlattices
- Enhanced Photocurrent Efficiency of a Carbon Nanotube Electromagnetically Coupled to a Photonic Structure
- Terahertz emitters and detectors based on carbon nanotubes
- Electrostatics of straight and bent nanotubes
- Bolometric arrays and infrared sensitivity of VO2 films with varying stoichiometry
- Growth of Tall Vertical Carbon Nanotube Forests using Al-Fe Catalysts and Transfer to Flexible Substrates
- Non-Adhesive Transfer Process of Carbon Nanotube Forests onto Flexible Kapton Substrates