A Fully Tunable Single-Walled Carbon Nanotube Diode

Abstract

We demonstrate a fully tunable diode structure utilizing a fully suspended single-walled carbon nanotube (SWNT). The diode's turn-on voltage under forward bias can be continuously tuned up to 4.3 V by controlling gate voltages, which is ~6 times the nanotube bandgap energy. Furthermore, the same device design can be configured into a backward diode by tuning the band-to-band tunneling current with gate voltages. A nanotube backward diode is demonstrated for the first time with nonlinearity exceeding the ideal diode. These results suggest that a tunable nanotube diode can be a unique building block for developing next generation programmable nanoelectronic logic and integrated circuits.

14 pages, 4 figures

References in corpus (2)

• Carbon Nanotubes as Schottky Barrier Transistors
• Zener Tunneling in Semiconducting Nanotube and Graphene Nanoribbon p-n Junctions

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• Confined Electron and Hole States in Semiconducting Carbon Nanotube sub-10 nm Artificial Quantum Dots
• Electrical Contacts to Three-Dimensional Arrays of Carbon Nanotubes