Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy

Abstract

We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with transport measurements allows a detailed microscopic study of the evolution of the band profiles as a function of the gates voltage. Here we study the emergence of a p-n and a n-p junctions out of a n-type transistor channel using two local gates. In both cases the I-V curves recorded for gate configurations corresponding to the formation of the p-n or n-p junction in the SPCM measurements reveal a clear transition from resistive to rectification regimes. The rectification curves can be fitted well to the Shockley diode model with a series resistor and reveal a clear ideal diode behavior.

Accepted for publication in Journal or Applied Physics. 4 pages, 3 figures

References in corpus (4)

• Photon Antibunching in the Photoluminescence Spectra of a Single Carbon Nanotube
• Tunable few-electron double quantum dots and Klein tunnelling in ultra-clean carbon nanotubes
• Photocurrent Imaging of p-n Junctions and Local Defects in Ambipolar Carbon Nanotube Transistors
• A Fully Tunable Single-Walled Carbon Nanotube Diode

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