Zener Tunneling in Semiconducting Nanotube and Graphene Nanoribbon p-n Junctions

Abstract

A theory is developed for interband tunneling in semiconducting carbon nanotube and graphene nanoribbon p-n junction diodes. Characteristic length and energy scales that dictate the tunneling probabilities and currents are evaluated. By comparing the Zener tunneling processes in these structures to traditional group IV and III-V semiconductors, it is proved that for identical bandgaps, carbon based 1D structures have higher tunneling probabilities. The high tunneling current magnitudes for 1D carbon structures suggest the distinct feasibility of high-performance tunneling-based field-effect transistors.

arXiv comment4 Pages, 2 Figures

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• Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
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• A Fully Tunable Single-Walled Carbon Nanotube Diode
• Common-Path Interference and Zener Tunneling in Bilayer Graphene p-n Junctions
• From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling
• Electronic properties of zigzag, armchair and their hybrid quantum dots of graphene and boron-nitride with and without substitution: A DFT study
• Crucial experiment to resolve Abraham-Minkowski Controversy
• Zener tunneling in the electrical transport of quasi-metallic carbon nanotubes
• Time-dependent simulation of particle and displacement currents in THz graphene transistors
• Zener tunneling isospin Hall effect in HgTe quantum wells and graphene multilayers
• High-order harmonic generation in 2D Transition Metal Disulphides