activity
20072012
most citedCarrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons

614 citations · 1.5k across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mtrl-sci2012★ 15 cited

Raman and Photoluminescence Study of Dielectric and Thermal Effects on Atomically Thin MoS2

Rusen Yan, Simone Bertolazzi, Jacopo Brivio +7

Atomically thin two-dimensional molybdenum disulfide (MoS2) sheets have attracted much attention due to their potential for future electronic applications. They not only present th…

cond-mat.mes-hall2011

Interband absorption in single layer hexagonal boron nitride

Aniruddha Konar, Raj Jana, Tian Fang +3

Monolayer of hexagonal boron nitride (h-BN), commonly known as "white graphene" is a promising wide bandgap semiconducting material for deep-ultaviolet optoelectronic devices. In t…

cond-mat.mtrl-sci2011★ 220 cited

Unique prospects of graphene-based THz modulators

Berardi Sensale-Rodriguez, Tian Fang, Rusen Yan +5

The modulation depth of 2-D electron gas (2DEG) based THz modulators using AlGaAs/GaAs heterostructures with metal gates is inherently limited to < 30%. The metal gate not only att…

cond-mat.mes-hall2011

Dielectric environment mediated quantum screening of one dimensional electron gas

Aniruddha Konar, Tian Fang, Debdeep Jena

Relaxing the assumption of "infinite and homogenous background" the dielectric response function of one-dimensional (1D) semiconducting nanowires embedded in a dielectric environme…

cond-mat.mes-hall2010★ 22 cited

Charged basal stacking fault (BSF) scattering in nitride semiconductors

Aniruddha Konar, Tian Fang, Nan Sun +1

A theory of charge transport in semiconductors in the presence of basal stacking faults is developed. It is shown that the presence of basal stacking faults leads to anisotropy in…

cond-mat.mes-hall2010★ 8 cited

Anisotropic charge transport in non-polar GaN QW: polarization induced charge and interface roughness scattering

Aniruddha Konar, Tian Fang, Nan Sun +1

Charge transport in GaN quantum well (QW) devices grown in non-polar direction has been theoretically investigated . Emergence of anisotropic line charge scattering mechanism origi…