Electrical Contacts to Carbon Nanotubes Down to 1nm in Diameter

Abstract

Rhodium (Rh) is found similar to Palladium (Pd) in making near-ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d > ~ 1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S-SWNTs) with d < ~ 1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors (FETs) and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters < ~ 1.0 nm possibly due to tunnel barriers.

Applied Physics Letters, in press

References in corpus (4)

• High-Field, Quasi-Ballistic Transport in Short Carbon Nanotubes
• Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics
• High Performance N-Type Carbon Nanotube Field Effect Transistors with Chemically Doped Contacts
• Ballistic Transport in Metallic Nanotubes With Reliable Pd Ohmic Contacts

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