Schottky-barrier double-walled carbon nanotube field-effect transistors

Abstract

We investigate electronic transport properties of Schottky-barrier field-effect transistors (FET) based on double-walled carbon nanotubes (DWNT) with a semiconducting outer shell and a metallic inner one. These kind of DWNT-FET show asymmetries of the $I$-$V$ characteristics and threshold voltages due to the electron-hole asymmetry of the Schottky barrier. The presence of the metallic inner shell induces a large effective band gap, which is one order of magnitude larger than that due to the semiconducting shell alone of a single-walled carbon nanotube FET.

4 pages, 3 figures. Published form

References in corpus (3)

• Proximity and anomalous field-effect characteristics in double-wall carbon nanotubes
• Helicity and electron correlation effects on transport properties of double-walled carbon nanotubes
• Anomalous diffusion and elastic mean free path in disorder-free multi-walled carbon nanotubes

Cited by in corpus (1)

• Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts