Microwave Rectification by a Carbon Nanotube Schottky Diode

Abstract

Carbon nanotube Schottky diodes have been fabricated in an all-photolithographic process using dissimilar contact metals on high-frequency compatible substrates (quartz and sapphire). Diodes show near-ideal behavior, and rectify currents of up to 100 nA and at frequencies up to 18 GHz. The voltage and frequency dependence is used to estimate the junction capacitance of ~10-18 F and the intrinsic device cut-off frequency of ~400 GHz.

To appear in Applied Physics Letters

References in corpus (5)

• Carbon Nanotubes as Schottky Barrier Transistors
• Role of Fermi-level pinning in nanotube Schottky diodes
• Electron-hole symmetry in a semiconducting carbon nanotube quantum dot
• Multiwalled carbon nanotube: Luttinger liquid or not?
• Mobility in semiconducting carbon nanotubes at finite carrier density

Cited by in corpus (4)

• Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing
• Terahertz detection mechanism and contact capacitance of individual metallic single-walled carbon nanotubes
• Possibility for exciton Bose-Einstein condensation in carbon nanotubes
• Theoretical and Experimental Studies of Schottky Diodes That Use Aligned Arrays of Single Walled Carbon Nanotubes