Theoretical study of Ga-based nanowires and the interaction of Ga with single-wall carbon nanotubes
arXiv:cond-mat/0511401 · doi:10.1103/PhysRevB.70.155305
Abstract
Gallium displays physical properties which can make it a potential element to produce metallic nanowires and high-conducting interconnects in nanoelectronics. Using first-principles pseudopotential plane method we showed that Ga can form stable metallic linear and zigzag monatomic chain structures. The interaction between individual Ga atom and single-wall carbon nanotube (SWNT) leads to a chemisorption bond involving charge transfer. Doping of SWNT with Ga atom gives rise to donor states. Owing to a significant interaction between individual Ga atom and SWNT, continuous Ga coverage of the tube can be achieved. Ga nanowires produced by the coating of carbon nanotube templates are found to be stable and high conducting.
arXiv comment8 pages, 8 figures
References in corpus (8)
- High-Field Electrical Transport in Single-Wall Carbon Nanotubes
- Formation and manipulation of a metallic wire of single gold atoms
- Role of Fermi-level pinning in nanotube Schottky diodes
- Non-Crystalline Structures of Ultra-Thin Unsupported Nanowires
- A systematic ab-initio study of curvature effects in carbon nanotubes
- Stiff monatomic gold wires with a spinning zigzag geometry
- Tunable adsorption on carbon nanotubes
- Structure of aluminum atomic chains