Performance limits of graphene-ribbon-based field effect transistors

Abstract

The performance of field effect transistors based on an single graphene ribbon with a constriction and a single back gate are studied with the help of atomistic models. It is shown how this scheme, unlike that of traditional carbon-nanotube-based transistors, reduces the importance of the specifics of the chemical bonding to the metallic electrodes in favor of the carbon-based part of device. The ultimate performance limits are here studied for various constriction and metal-ribbon contact models. In particular we show that, even for poorly contacting metals, properly taylored constrictions can give promising values for both the on-conductance and the subthreshold swing.

5 pages, 4 figures

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Cited by in corpus (9)

• Vacancy induced magnetism in graphene and graphene ribbons
• Resistivity of Graphene Nanoribbon Interconnects
• Hidden multiferroic order in graphene zigzag ribbons
• Gate-controlled conductance through bilayer graphene ribbons
• External Bias Dependent Direct To Indirect Bandgap Transition in Graphene Nanoribbon
• Conductance Through Graphene Bends and Polygons
• Conductance quantization in graphene nanoconstrictions with mesoscopically smooth but atomically stepped boundaries
• Coherent transport of armchair graphene constrictions
• Edge channels in a graphene Fabry-Perot interferometer