Resistivity of Graphene Nanoribbon Interconnects
arXiv:0906.0924 · doi:10.1109/LED.2009.2020182
Abstract
Graphene nanoribbon interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given line-width (18nm<W<52nm) is about 3X that of a Cu wire, whereas the best GNR has a resistivity comparable to that of Cu. The conductivity is found to be limited by impurity scattering as well as LER scattering; as a result, the best reported GNR resistivity is 3X the limit imposed by substrate phonon scattering. This study reveals that even moderate-quality graphene nanowires have the potential to outperform Cu for use as on-chip interconnects.
10 pages, 3 figures, to be published in IEEE Electron Device Letters
References in corpus (8)
- Ultrahigh electron mobility in suspended graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Graphene Nano-Ribbon Electronics
- Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
- A Graphene Field-Effect Device
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
Cited by in corpus (11)
- Breakdown Current Density of Graphene Nano Ribbons
- The role of contact resistance in graphene field-effect devices
- Effect of Grain Boundaries on Thermal Transport in Graphene
- Impact of Size Effect on Graphene Nanoribbon Transport
- Specific Heat of Twisted Bilayer Graphene
- Spintronic Properties of Zigzag-Edged Triangular Graphene Flakes
- Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications
- Phonon hydrodynamics in crystalline materials
- Graphene morphology regulated by nanowires patterned in parallel on a substrate surface
- Theoretical study of scattering in graphene ribbons in the presence of structural and atomistic edge roughness
- A Molecular Mechanics Study of Morphologic Interaction between Graphene and Si Nanowires on a SiO2 Substrate