Formation of localized magnetic states in graphene in hollow-site adsorbed adatoms
arXiv:1806.04810 · doi:10.1016/j.spmi.2017.11.007
Abstract
By applying tight binding model of adatoms in graphene, we study theoretically the localized aspects of the interaction between transition metal atoms and graphene. Considering the electron-electron interaction by adding a Hubbard term in the mean-field approximation, we find the spin-polarized localized and total density of states. We obtain the coupled system of equations for the occupation number for each spin in the impurity and we study the fixed points of the solutions. By comparing the top site and hollow site adsorption, we show that the anomalous broadening of the latter allows to obtain magnetization for small values of the Hubbard parameter. Finally, we model the magnetic boundaries in order to obtain the range of Fermi energies at which magnetization starts.
arXiv comment10 pages
References in corpus (19)
- The electronic properties of graphene
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Half-Metallic Graphene Nanoribbons
- Electronic spin transport and spin precession in single graphene layers at room temperature
- Adsorption of H2O, NH3, CO, NO2, and NO on graphene: A first-principles study
- Titanium-decorated carbon nanotubes: a potential high-capacity hydrogen storage medium
- Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics
- Graphite and graphene as perfect spin filters
- Localized Magnetic States in Graphene
- Kondo Quantum Criticality of Magnetic Adatoms in Graphene
- Tunable bandgap and magnetic ordering by adsorption of molecules on graphene
- Co dimers on hexagonal carbon rings proposed as subnanometer magnetic storage bits
- Impurity effects in a two--dimensional system with Dirac spectrum
- Theory of Scanning Tunneling Spectroscopy of Magnetic Adatoms in Graphene
- Magnetic Structure of Hydrogen Induced Defects on Graphene
- Landau level transitions indoped graphene in a time dependent magnetic field
- Valley properties of doped graphene in a magnetic field
- Ballistic transport properties in pristine-doped-pristine graphene junctions
- Dynamical diffusion and renormalization group equation for the Fermi velocity in doped graphene