High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities

Abstract

State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device concept, we have fabricated high-performance, enhancement-mode CNFETs exhibiting n or p-type unipolar behavior, tunable by electrostatic and/or chemical doping, with excellent OFF-state performance and a steep subthreshold swing (S =63 mV/dec). The device design allows for aggressive oxide thickness and gate length scaling while maintaining the desired device characteristics.

26 pages, 12 figures, accepted for IEEE Trans. Nanotechnology

References in corpus (9)

• High-Field Electrical Transport in Single-Wall Carbon Nanotubes
• Carbon Nanotubes as Schottky Barrier Transistors
• Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics
• Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
• A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors
• Drain Voltage Scaling in Carbon Nanotube Transistors
• Lateral scaling in carbon nanotube field-effect transistors
• Unexpected Scaling of the Performance of Carbon Nanotube Transistors
• High performance n-doped carbon nanotube field-effect transistors

Cited by in corpus (6)

• Field-effect transistors assembled from functionalized carbon nanotubes
• Top-down fabricated reconfigurable FET with two symmetric and high-current on-states
• Direct and Heterodyne Detection of Microwaves in a Metallic Single Wall Carbon Nanotube
• Silicon-CMOS Compatible In-Situ CCVD Grown Graphene Transistors with Ultra-High On/Off-Current Ratio
• Hybrid Pass Transistor Logic with Ambipolar Transistors
• Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance