502 citations · 838 across the 13 of their papers we have counts for
13 papers
Movable Gate MOSFETs as Readout Devices for Cantilever-Based Nano-Electromechanical Sensors
Z. Geng, A. Hessel, S. C. Scholz +3
This work proposes a novel readout mechanism for highly sensitive cantilever-based mass sensors using movable-gate (MG) MOSFETs. Traditional dynamic-mode cantilever sensors measure…
Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures
Dirk König, Michael Frentzen, Daniel Hiller +9
The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscal…
Role of electron and ion irradiation in a reliable lift-off process with e-beam evaporation and a bilayer PMMA resist system
Bin Sun, Thomas Grap, Thorben Frahm +2
This paper addresses issues related to cracking and blisters in deposited films encountered in a lift-off process with electron beam evaporation and a bilayer PMMA resist system. T…
On the Performance of Dual-Gate Reconfigurable Nanowire Transistors
Bin Sun, Benjamin Richstein, Patrick Liebisch +5
We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this…
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Slawomir Prucnal, Maciej O. Liedke, Xiaoshuang Wang +17
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrate…
Electronic Structure Shift of Deep Nanoscale Silicon by SiO- vs. SiN-Embedding as Alternative to Impurity Doping
Dirk König, Noël Wilck, Daniel Hiller +7
Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on…