502 citations · 838 across the 13 of their papers we have counts for
5 papers · 1 filter
Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures
Dirk König, Michael Frentzen, Daniel Hiller +9
The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscal…
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Slawomir Prucnal, Maciej O. Liedke, Xiaoshuang Wang +17
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrate…
Low-frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes
Yu-Ming Lin, Joerg Appenzeller, Joachin Knoch +2
We present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By e…
High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities
Yu-Ming Lin, Joerg Appenzeller, Joachim Knoch +1
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide signif…
High performance n-doped carbon nanotube field-effect transistors
M. Radosavljevic, J. Appenzeller, Ph. Avouris +1
We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a…