High performance n-doped carbon nanotube field-effect transistors
arXiv:cond-mat/0402350 · doi:10.1063/1.1737062
Abstract
We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a tunable threshold voltage in the technologically relevant range (-1.3V < V_th < 0.5V) and can carry up to 5-6 muA of current in the on-state. We achieve such performance by exposure to potassium (K) vapor and device annealing in high vacuum. The treatment has a two-fold effect to: (i) controllably shift V_th toward negative gate biases via bulk doping of the nanotube (up to about 0.6e/nm), and (ii) increase the on-current by 1-2 orders of magnitude. This current enhancement is achieved by lowering external device resistance due to more intimate contact between K metal and doped nanotube channel in addition to potential reduction of the Schottky barrier height at the contact.
"The following article has been submitted to Applied Physics Letters. After it is published, it will be found at http://scitation.aip.org/aplo"
References in corpus (3)
Cited by in corpus (10)
- Graphene Nano-Ribbon Electronics
- High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities
- Charge Transfer Induced Polarity Switching in Carbon Nanotube Transistors
- Low-frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes
- Dispersion C3 coefficients for the alkali-metal atoms interacting with a graphene layer and with a carbon nanotube
- Interaction of solid organic acids with carbon nanotube field effect transistors
- Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance
- Scattering strength of potassium on a carbon nanotube with known chirality
- Modulating transmission properties of nanoscale transistors by dipole effects near contacts
- Coupled quantum wires