2 papers
cond-mat.mtrl-sci2004
High performance n-doped carbon nanotube field-effect transistors
M. Radosavljevic, J. Appenzeller, Ph. Avouris +1
We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a…
cond-mat.mes-hall2003
Drain Voltage Scaling in Carbon Nanotube Transistors
M. Radosavljevic, S. Heinze, J. Tersoff +1
While decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior, we demonstrate that this also requires scaling the range of…