2 papers
cond-mat.mtrl-sci2005
High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities
Yu-Ming Lin, Joerg Appenzeller, Joachim Knoch +1
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide signif…
cond-mat.mes-hall2003
Lateral scaling in carbon nanotube field-effect transistors
S. J. Wind, J. Appenzeller, Ph. Avouris
We have fabricated carbon nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteri…