502 citations · 981 across the 7 of their papers we have counts for
7 papers
Experimental demonstration of an integrated on-chip p-bit core utilizing stochastic Magnetic Tunnel Junctions and 2D-MoS2 FETs
John Daniel, Zheng Sun, Xuejian Zhang +4
Probabilistic computing is a novel computing scheme that offers a more efficient approach than conventional CMOS-based logic in a variety of applications ranging from optimization…
Design Considerations for 2D Dirac-Source FETs: Device Parameters, Non-Idealities and Benchmarking
Peng Wu, Joerg Appenzeller
Dirac-source field-effect transistors (DS-FETs) have been proposed as promising candidates for low-power switching devices by leveraging the Dirac cone of graphene as a low-pass en…
How to Report and Benchmark Emerging Field-Effect Transistors
Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang +13
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device per…
A Magnetoelectric Memory Device Based on Pseudo-Magnetization
Tingting Shen, Orchi Hassan, Neil R. Dilley +2
We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoe…
Mobility Extraction and Quantum Capacitance Impact in High Performance Graphene Field-effect Transistor Devices
Zhihong Chen, Joerg Appenzeller
The field-effect mobility of graphene devices is discussed. We argue that the graphene ballistic mean free path can only be extracted by taking into account both, the electrical ch…
High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities
Yu-Ming Lin, Joerg Appenzeller, Joachim Knoch +1
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide signif…