Mobility Extraction and Quantum Capacitance Impact in High Performance Graphene Field-effect Transistor Devices

Abstract

The field-effect mobility of graphene devices is discussed. We argue that the graphene ballistic mean free path can only be extracted by taking into account both, the electrical characteristics and the channel length dependent mobility. In doing so we find a ballistic mean free path of 300nm at room-temperature for a carrier concentration of ~1e12/cm2 and that a substantial series resistance of around 300ohmum has to be taken into account. Furthermore, we demonstrate first quantum capacitance measurements on single-layer graphene devices.

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• A Graphene-based Hot Electron Transistor
• Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators
• Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods
• Probing 2D Black Phosphorus by Quantum Capacitance Measurements