Atomistic investigation of low-field mobility in graphene nanoribbons

Abstract

We have investigated the main scattering mechanisms affecting mobility in graphene nanoribbons using detailed atomistic simulations. We have considered carrier scattering due to acoustic and optical phonons, edge roughness, single defects, and ionized impurities, and we have defined a methodology based on simulations of statistically meaningful ensembles of nanoribbon segments. Edge disorder heavily affects mobility at room temperature in narrower nanoribbons, whereas charged impurities and phonons are hardly the limiting factors. Results are favorably compared to the few experiments available in the literature.

arXiv comment7 pages, 9 figures

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Cited by in corpus (2)

• A Comparative Study of Substrates Disorder on Mobility in the Graphene Nanoribbon: Charged Impurity, Surface Optical Phonon, Surface Roughness
• Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations