Analytical model of 1D Carbon-based Schottky-Barrier Transistors

Abstract

Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for onedimensional field-effect transistors (FETs), taking into account on equal footing both SB contacts and FFE transport regime. Intermediate transport is introduced within the Buttiker probe approach to dissipative transport, in which a non-ballistic transistor is seen as a suitable series of individually ballistic channels. Our model permits the study of the interplay of SBs and ambipolar FFE transport, and in particular of the transition between SB-limited and dissipation-limited transport.

References in corpus (7)

• Electric Field Effect in Atomically Thin Carbon Films
• Energy Gaps in Graphene Nanoribbons
• Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs
• Ultra-low-voltage bilayer graphene tunnel FET
• Electron transport in a one dimensional conductor with inelastic scattering by self-consistent reservoirs
• Model of tunneling transistors based on graphene on SiC
• Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime

Cited by in corpus (4)

• Atomistic investigation of low-field mobility in graphene nanoribbons
• Model and performance evaluation of field-effect transistors based on epitaxial graphene on SiC
• Analytical Model of One-Dimensional Ballistic Schottky-Barrier Transistors
• Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors