Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors

Abstract

A simple model based on the WKB approximation for one-dimensional ballistic multi--gate reconfigurable field--effect transistors (RFETs) with Schottky-Barrier contacts has been developed for the drain current taking into account electron and hole band-to-band tunneling. By using a proper approximation of both the Fermi-Dirac distribution function and transmission probability, an analytical solution for the Landauer integral can be obtained. A comparative analysis of the two-gate and triple-gate RFETs is performed based on the numerical integration of the current integral.

6 pages, 3 figures. This article provides original results, although it contains a certain amount of text reused from arXiv:1703.05092. The relationship between these works includes the similar motivation, model limitation, approximation of the electron distribution, and importance of findings

References in corpus (3)

• Scaling of Resistance and Electron Mean Free Path of Single-Walled Carbon Nanotubes
• A simple drain current model for Schottky-barrier carbon nanotube field effect transistors
• Analytical model of 1D Carbon-based Schottky-Barrier Transistors