Model of tunneling transistors based on graphene on SiC

Abstract

Recent experiments shown that graphene epitaxially grown on Silicon Carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully ballistic graphene-on-SiC Tunnel Field-Effect Transistors (TFETs), and assess the DC and high frequency figures of merit. The steep subthreshold behavior can enable I_{ON}/I_{OFF} ratios exceeding 10^4 even with a low supply voltage of 0.15 V, for devices with gatelength down to 30 nm. Intrinsic transistor delays smaller than 1 ps are obtained. These factors make the device an interesting candidate for low-power nanoelectronics beyond CMOS.

References in corpus (7)

• Electric Field Effect in Atomically Thin Carbon Films
• Substrate-induced band gap opening in epitaxial graphene
• Origins of anomalous electronic structures of epitaxial graphene on silicon carbide
• Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
• Origin of the energy bandgap in epitaxial graphene
• Ultra-low-voltage bilayer graphene tunnel FET
• A semi-analytical model of Bilayer Graphene Field Effect Transistor

Cited by in corpus (7)

• Analytical model of 1D Carbon-based Schottky-Barrier Transistors
• Electric-Field-control of spin rotation in bilayer graphene
• Disorder effects on energy bandgap and electronic transport in graphene-nanomesh-based structures
• Model and performance evaluation of field-effect transistors based on epitaxial graphene on SiC
• Large peak-to-valley ratio of negative-differential-conductance in graphene p-n junctions
• Planar graphene tunnel field-effect transistor
• The influence of the optical Stark effect on chiral tunneling in graphene