Electric-Field-control of spin rotation in bilayer graphene

Abstract

The manipulation of the electron spin degree of freedom is at the core of the spintronics paradigm, which offers the perspective of reduced power consumption, enabled by the decoupling of information processing from net charge transfer. Spintronics also offers the possibility of devising hybrid devices able to perform logic, communication, and storage operations. Graphene, with its potentially long spin-coherence length, is a promising material for spin-encoded information transport. However, the small spin-orbit interaction is also a limitation for the design of conventional devices based on the canonical Datta-Das spin-FET. An alternative solution can be found in magnetic doping of graphene, or, as discussed in the present work, in exploiting the proximity effect between graphene and Ferromagnetic Oxides (FOs). Graphene in proximity to FO experiences an exchange proximity interaction (EPI), that acts as an effective Zeeman field for electrons in graphene, inducing a spin precession around the magnetization axis of the FO. Here we show that in an appropriately designed double-gate field-effect transistor, with a bilayer graphene channel and FO used as a gate dielectric, spin-precession of carriers can be turned ON and OFF with the application of a differential voltage to the gates. This feature is directly probed in the spin-resolved conductance of the bilayer.

References in corpus (18)

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• The electronic properties of graphene
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Cited by in corpus (19)

• Graphene Spintronics
• Van der Waals heterostructures for spintronics and opto-spintronics
• Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents
• Towards wafer scale fabrication of graphene based spin valve devices
• Integration of the Ferromagnetic Insulator EuO onto Graphene
• Electrical and Thermal Generation of Spin Currents by Magnetic Graphene
• Strong modulation of spin currents in bilayer graphene by static and fluctuating proximity exchange fields
• Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics
• Electrically tunable exchange splitting in bilayer graphene on monolayer Cr${}_2$X${}_2$Te${}_6$ with X=Ge, Si, and Sn
• Swapping Exchange and Spin-Orbit Coupling in 2D van der Waals Heterostructures
• Local Temperatures Out of Equilibrium
• Electron optics with dirac fermions: electron transport in monolayer and bilayer graphene through magnetic barrier and their superlattices
• Spintronic devices from bilayer graphene in contact to ferromagnetic insulators
• Intraband electron focusing in bilayer graphene
• Enhanced Spin-Flip Scattering by Surface Roughness in WS${}_2$ and MoS${}_2$ Armchair Nanoribbons
• Reversal of Klein reflection in bilayer graphene
• Integrating MBE materials with graphene to induce novel spin-based phenomena
• Weak de-localization in graphene on a ferromagnetic insulating film
• The Effects of vertical electric field and charged impurities on the spin-polarized transport of $\beta$-antimonene armchair nanoribbons