Enhanced Spin-Flip Scattering by Surface Roughness in WS and MoS Armchair Nanoribbons
arXiv:1606.03339 · doi:10.1103/PhysRevB.95.165301
Abstract
The band structures of single-layer MoS and WS present a coupling between spin and valley degrees of freedom that suppresses spin-flip scattering and spin dephasing. Here we show that out-of-plane deformations, such as corrugations or ripples, enhance spin-flip scattering in armchair MoS and WS nanoribbons. Spin transport in the presence of surface roughness is systematically investigated, employing the non-equilibrium Green's function method along with the tight-binding approximation. Both transmission and conductance have been calculated as a function of surface roughness. Our results indicate that the spin-flip rate, usually neglected in flat pristine samples, increases significantly with the surface roughness amplitude. These results are important for the design and fabrication of transition metal dichalcogenides based spintronic devices.
References in corpus (32)
- Van der Waals heterostructures
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Valley polarization in MoS2 monolayers by optical pumping
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- Graphene Spintronics
- Electronic States of Graphene Nanoribbons
- Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides
- Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
- Electronic properties of the MoS2-WS2 heterojunction
- Robust optical emission polarization in MoS2 monolayers through selective valley excitation
- Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS
- Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides
- Transport Theory of Monolayer Transition-Metal Dichalcogenides through Symmetry
- Strong modulation of optical properties in black phosphorus through strain-engineered rippling
- Theory of strain in single-layer transition metal dichalcogenides
- Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates
- Spin-Orbit mediated spin relaxation in monolayer MoS2
- Spintronics in MoS_2 monolayer quantum wires
- Transition-metal dichalcogenide bilayers: switching materials for spin- and valleytronic applications
- Momentum dependence of spin-orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides
- Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS and WS
- Magneto-Transport in MoS2: Phase Coherence, Spin Orbit Scattering and the Hall Factor
- Single-layer MoS2 roughness and sliding friction quenching by interaction with atomically flat substrates
- Curvature-induced anisotropic spin-orbit splitting in carbon nanotubes
- Edge modes in zigzag and armchair ribbons of monolayer MoS
- Symmetries of quantum transport with Rashba spin-orbit: Graphene spintronics
- Inverse Funnel Effect of Excitons in Strained Black Phosphorus
- Electronic Properties of Disordered Graphene Antidot Lattices
- Electric-Field-control of spin rotation in bilayer graphene
- Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals
- Emergent gauge fields from curvature in single layers of transition-metal dichalcogenides
- Intrinsic spin-orbit interactions in flat and curved graphene nanoribbons
Cited by in corpus (5)
- Electronic transport in disordered MoS nanoribbons
- The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field
- The Effects of vertical electric field and charged impurities on the spin-polarized transport of -antimonene armchair nanoribbons
- Intrinsic edge excitons in two-dimensional MoS
- Spin Transport in Armchair Silicene Nanoribbon on the Substrate: The Role of Charged Impurity