Electronic transport in disordered MoS${}_2$ nanoribbons

Abstract

We study the electronic structure and transport properties of zigzag and armchair monolayer molybdenum disulfide nanoribbons using an 11-band tight-binding model that accurately reproduces the material's bulk band structure near the band gap. We study the electronic properties of pristine zigzag and armchair nanoribbons, paying particular attention to the edges states that appear within the MoS${}_2$ bulk gap. By analyzing both their orbital composition and their local density of states, we find that in zigzag-terminated nanoribbons these states can be localized at a single edge for certain energies independent of the nanoribbon width. We also study the effects of disorder in these systems using the recursive Green's function technique. We show that for the zigzag nanoribbons, the conductance due to the edge states is strongly suppressed by short-range disorder such as vacancies. In contrast, the local density of states still shows edge localization. We also show that long-range disorder has a small effect on the transport properties of nanoribbons within the bulk gap energy window.

arXiv comment10 pages, 9 figures

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• Intrinsic edge excitons in two-dimensional MoS${}_2$
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• Spatial mapping of disordered 2D materials: the conductance Sudoku
• Scanning gate microscopy mapping of edge current and branched electron flow in a transition metal dichalcogenide nanoribbon and quantum point contact
• Stability of edge magnetism against disorder in zigzag MoS${}_2$ nanoribbons
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• Staircase-like transfer characteristics in multilayer MoS2 field-effect transistors
• Disordered Si:P nanostructures as switches and wires for nanodevices