Electric Field Effects on Armchair MoS2 Nanoribbons

Abstract

{\it Ab initio} density functional theory calculations are performed to investigate the electronic structure of MoS${}_2$ armchair nanoribbons in the presence of an external static electric field. Such nanoribbons, which are nonmagnetic and semiconducting, exhibit a set of weakly interacting edge states whose energy position determines the band-gap of the system. We show that, by applying an external transverse electric field, $E_{\mathrm{ext}}$, the nanoribbons band-gap can be significantly reduced, leading to a metal-insulator transition beyond a certain critical value. Moreover, the presence of a sufficiently high density of states at the Fermi level in the vicinity of the metal-insulator transition leads to the onset of Stoner ferromagnetism that can be modulated, and even extinguished, by $E_{\mathrm{ext}}$. In the case of bi-layer nanoribbons we further show that the band-gap can be changed from indirect to direct by applying a transverse field, an effect which might be of significance for opto-electronics applications.

12 pages, 15 figures

References in corpus (8)

• Electric Field Effect in Atomically Thin Carbon Films
• Two Dimensional Atomic Crystals
• Energy Band Gap Engineering of Graphene Nanoribbons
• Energy Gaps in Graphene Nanoribbons
• Half-Metallic Graphene Nanoribbons
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Energy Gaps and Stark Effect in Boron Nitride Nanoribbons
• Energy-gap modulation of boron nitride nanoribbons by transverse electric fields: First-principles calculations

Cited by in corpus (21)

• Polarity Reversed Robust Carrier Mobility in Monolayer MoS2 Nanoribbons
• Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides
• Lattice Vibrational Modes and Phonon Thermal Conductivity of Monolayer MoS2
• Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides
• Graphene and MoS2 interacting with water: a comparison by ab initio calculations
• Scaling laws for band gaps of phosphorene nanoribbons: A tight-binding calculation
• Quantum-confinement and Structural Anisotropy result in Electrically-Tunable Dirac Cone in Few-layer Black Phosphorous
• Efficient spin injection and giant magnetoresistance in Fe/MoS${}_2$/Fe junctions
• Semiconductor-to-metal transition in bilayer MoSi${}_2$N${}_4$ and WSi${}_2$N${}_4$ with strain and electric field
• Monolayer Molybdenum Disulfide Nanoribbons with High Optical Anisotropy
• Edge modes in zigzag and armchair ribbons of monolayer MoS${}_2$
• Graphene nanoflakes in external electric and magnetic in-plane fields
• Electron Transport in MoWSeS Monolayers in Presence of an External Electric Field
• Electronic transport in disordered MoS${}_2$ nanoribbons
• Ultra-Narrow TaS2 Nanoribbons
• Spin-Resolved Self-Doping Tunes the Intrinsic Half-Metallicity of AlN Nanoribbons
• Room-temperature antiferromagnetic CrSe monolayer with tunable metal-insulator transition in ferroelectric heterostructures
• Extracting unconventional spin texture in two dimensional topological crystalline insulator bismuthene via tuning bulk-edge interactions
• Width-dependent Photoluminescence and Anisotropic Raman Spectroscopy from Monolayer MoS${}_2$ Nanoribbons
• Valley Pumping via Edge States and the Nonlocal Valley Hall Effect in Two-Dimensional Semiconductors
• MoS2 Nanoribbons Thermoelectric Generators