Efficient spin injection and giant magnetoresistance in Fe/MoS${}_2$/Fe junctions

Abstract

We demonstrate giant magnetoresistance in Fe/MoS${}_2$/Fe junctions by means of \textit{ab-initio} transport calculations. We show that junctions incorporating either a mono- or a bi-layer of MoS${}_2$ are metallic and that Fe acts as an efficient spin injector into MoS${}_2$ with an efficiency of about 45\%. This is the result of the strong coupling between the Fe and S atoms at the interface. For junctions of greater thickness a maximum magnetoresistance of $\sim$300\% is obtained, which remains robust with the applied bias as long as transport is in the tunneling limit. A general recipe for improving the magnetoresistance in spin valves incorporating layered transition metal dichalcogenides is proposed.

arXiv commentUpdated text, published version

References in corpus (16)

• Atomically thin MoS2: A new direct-gap semiconductor
• The SIESTA method for ab initio order-N materials simulation
• Efficient index handling of multidimensional periodic boundary conditions
• Two Dimensional Atomic Crystals
• Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
• Field-effect tunneling transistor based on vertical graphene heterostructures
• Optical Spectrum of MoS${}_2$: Many-body Effects and Diversity of Exciton States
• Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
• Designing electrical contacts to MoS${}_2$ monolayers: A computational study
• Graphite and graphene as perfect spin filters
• Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
• Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides
• Origin of the n-type and p-type conductivity of MoS2 monolayers on a SiO2 substrate
• Electric Field Effects on Armchair MoS2 Nanoribbons
• Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride
• Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions

Cited by in corpus (13)

• Spin-valve Effect in NiFe/MoS2/NiFe Junctions
• Magnetic Transition in Monolayer VSe2 via Interface Hybridization
• Nature of carrier injection in metal/2D semiconductor interface and its implications to the limits of contact resistance
• Room-Temperature Spin-Valve Effect in Fe${}_3$GaTe${}_2$/MoS${}_2$/Fe${}_3$GaTe${}_2$ 2D van der Waals Heterojunction Devices
• Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions
• Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide
• Nonequilibrium spin injection in monolayer black phosphorus
• Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures
• Unconventional bias-dependent tunneling magnetoresistance in van der Waals ferromagnetic/semiconductor heterojunctions
• Ab initio simulation of the structure and transport properties of zirconium and ferromagnetic cobalt contacts on the two-dimensional semiconductor WS_2
• Giant tunneling magnetoresistance based on spin-valley-mismatched ferromagnetic metals
• An investigation on electronic and magnetic properties of Cr substituted MoS${}_2$ monolayer and multilayers-Hybrid functional calculations
• Spin-dependent Transport Studies of Fe/Mo${}_x$Cr${}_{1-x}$S${}_2$/Fe Magnetic Tunnel Junction