Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions

Abstract

The bias dependence of the tunnel magnetoresistance (TMR) of Fe/MgO/Fe tunnel junctions is investigated theoretically with a fully self-consistent scheme that combines the non-equilibrium Green's functions method with density functional theory. At voltages smaller than 20 mVolt the I-V characteristics and the TMR are dominated by resonant transport through narrow interface states in the minority spin-band. In the parallel configuration this contribution is quenched by a voltage comparable to the energy width of the interface state, whereas it persists at all voltages in the anti-parallel configuration. At higher bias the transport is mainly determined by the relative positions of the ${\Delta }_1$ band-edges in the two Fe electrodes, which causes a decrease of the TMR.

References in corpus (4)

• The SIESTA method for ab initio order-N materials simulation
• Efficient index handling of multidimensional periodic boundary conditions
• Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions
• Asymmetric I-V characteristics and magnetoresistance in magnetic point contacts

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