Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions

Abstract

We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111). The Co-based junction is shown to have a TMR ratio over 2000$\%$, which is one order higher than that of the Ni-based one. The high TMR ratio is attributed to the interfacial resonance effect: The interfacial $d$-$p$ antibonding states are formed close to the Fermi level in the majority-spin channel and these states in both interfaces resonate with each other. This differs essentially from the conventional coherent tunneling mechanism of high TMR ratios in Fe(Co)/MgO/Fe(Co)(001).

5 pages, 5 figures, 1 table

References in corpus (5)

• Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions
• Ballistic conductance of magnetic Co and Ni nanowires with ultrasoft pseudo-potentials
• First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers
• Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions
• Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions

Cited by in corpus (4)

• Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study
• Local density of states as a probe for tunneling magnetoresistance effect: application to ferrimagnetic tunnel junctions
• Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO${}_3$ barriers
• Theory of tunnel magnetoresistance in magnetic tunnel junctions with hexagonal boron nitride barriers: mechanism and application to ferromagnetic alloy electrodes