Large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier

Abstract

All-oxide magnetic tunnel junctions (MTJs) incorporating functional materials as insulating barriers have the potential of becoming the founding technology for novel multi-functional devices. We investigate, by first-principles density functional theory, the bias-dependent transport properties of an all-oxide SrRuO3/BaTiO3/SrRuO3 MTJ. This incorporates a BaTiO3 barrier which can be found either in a non-ferroic or in a ferroelectric state. In such an MTJ not only can the tunneling magnetoresistance reach enormous values, but also, for certain voltages, its sign can be changed by altering the barrier electric state. These findings pave the way for a new generation of electrically-controlled magnetic sensors.

4 pages, 5 figures

References in corpus (3)

• Electronic properties of bulk and thin film SrRuO${}_3$: a search for the metal-insulator transition
• Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers
• Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions

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