Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction

Abstract

We demonstrate with first-principles electron transport calculations that large tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects can coexist in an all-oxide device. The TMR originates from the symmetry-driven spin filtering provided by the insulating BaTiO3 barrier to the electrons injected from SrRuO3. In contrast the TER is possible only when a thin SrTiO3 layer is intercalated at one of the SrRuO3/BaTiO3 interfaces. As the complex band-structure of SrTiO3 has the same symmetry than that of BaTiO3, the inclusion of such an intercalated layer does not negatively alter the TMR and in fact increases it. Crucially, the magnitude of the TER also scales with the thickness of the SrTiO3 layer. The SrTiO3 thickness becomes then a single control parameter for both the TMR and the TER effect. This protocol offers a practical way to the fabrication of four-state memory cells.

References in corpus (2)

• Electronic properties of bulk and thin film SrRuO${}_3$: a search for the metal-insulator transition
• A variational pseudo-self-interaction correction approach: ab-initio description of correlated oxides and molecules

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