Spin-valve Effect in NiFe/MoS2/NiFe Junctions

Abstract

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ~ 9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.

References in corpus (7)

• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Graphite and graphene as perfect spin filters
• Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics
• Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride
• Efficient spin injection and giant magnetoresistance in Fe/MoS${}_2$/Fe junctions
• Tunnel Magnetoresistance with Atomically Thin Two-Dimensional Hexagonal Boron Nitride Barriers
• Electronic structure of two-dimensional crystals from ab-initio theory

Cited by in corpus (21)

• Colloquium: Spintronics in graphene and other two-dimensional materials
• Tunneling spin valves based on Fe${}_3$GeTe${}_2$/hBN/Fe${}_3$GeTe${}_2$ van der Waals heterostructures
• Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications
• Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization
• Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction
• Room-Temperature Spin-Valve Effect in Fe${}_3$GaTe${}_2$/MoS${}_2$/Fe${}_3$GaTe${}_2$ 2D van der Waals Heterojunction Devices
• Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide
• Squeezed metallic droplet with tunable Kubo gap and charge injection in transition metal dichalcogenides
• Current-induced spin polarization and spin-orbit torque in graphene
• Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors
• Spirals and skyrmions in antiferromagnetic triangular lattices
• Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2
• Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures
• Van der Waals Magnetic Electrode Transfer for Two-Dimensional Spintronic Devices
• Universal transfer and stacking technique of van der Waals heterostructures for spintronics
• Electron spin dynamics of two-dimensional layered materials
• Gap states and valley-spin filtering in transition metal dichalcogenide monolayers
• Enhanced Magnetism in Heterostructures with Transition-Metal Dichalcogenide Monolayers
• Spin-Current Control by Induced Electric-Polarization Reversal in Ni/hBN/Ni: A Cross-Correlation Material
• Spin-dependent Transport Studies of Fe/Mo${}_x$Cr${}_{1-x}$S${}_2$/Fe Magnetic Tunnel Junction
• High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission