Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2
arXiv:2205.02876 · doi:10.1063/5.0089162
Abstract
The phenomenon originating from spin-orbit coupling (SOC) provides energy-efficient strategies for spin manipulation and device applications. The broken inversion symmetry interface and resulting electric field induce a Rashba-type spin-orbit field (SOF), which has been demonstrated to generate spin-orbit torque for data storage applications. In this study, we found that spin flipping can be achieved by the valley-Zeeman SOF in monolayer WSe2 at room temperature, which manifests as a negative magnetoresistance in the vertical spin valve. Quantum transmission calculations based on an effective model near the K valley of WSe2 confirm the precessional spin transport of carriers under the giant SOF, which is estimated to be 650 T. In particular, the valley-Zeeman SOF-induced spin dynamics was demonstrated to be tunable with the layer number and stacking phase of WSe2 as well as the gate voltage, which provides a novel strategy for spin manipulation and can benefit the development of ultralow-power spintronic devices.
arXiv comment7 pages,3 figures
References in corpus (27)
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- New Perspectives for Rashba Spin-Orbit Coupling
- Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
- Kwant: a software package for quantum transport
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Emergent Phenomena Induced by Spin-Orbit Coupling at Surfaces and Interfaces
- Magnetic Control of Valley Pseudospin in Monolayer WSe2
- Valley Zeeman Effect in Elementary Optical Excitations of a Monolayer WSe2
- Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides
- Colloquium: Spintronics in graphene and other two-dimensional materials
- Graphite and graphene as perfect spin filters
- Spin-Layer Locking Effects in Optical Orientation of Exciton Spin in Bilayer WSe2
- Direct observation of spin-polarised bulk bands in an inversion-symmetric semiconductor
- All-electric all-semiconductor spin field effect transistors
- Electronic structure of normal and inverse spinel ferrites from first principles
- Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with vertical composition gradient
- Probing critical point energies of transition metal dichalcogenides: surprising indirect gap of single layer
- Giant Spin Lifetime Anisotropy in Graphene Induced by Proximity Effects
- Spin-valve Effect in NiFe/MoS2/NiFe Junctions
- Proximity effects in bilayer graphene on monolayer WSe: Field-effect spin-valley locking, spin-orbit valve, and spin transistor
- Mesoscopic spin confinement during acoustically induced transport
- Gate controlled spin-valley locking of resident carriers in WSe2 monolayers
- Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene
- Type-II Ising superconductivity in two-dimensional materials with strong spin-orbit coupling
- The valley Zeeman effect in inter- and intra-valley trions in monolayer WSe
- Electrical control of valley-Zeeman spin-orbit coupling-induced spin precession at room temperature
- Universal transfer and stacking technique of van der Waals heterostructures for spintronics