317 citations · 2.1k across the 42 of their papers we have counts for
42 papers
Emergent Anti-ferromagnetism in a Y -Shaped Kekulé Graphene
Chenyue Wen, Wanpeng Han, Xukun Feng +5
Antiferromagnetic (AF) transitions of birefringent Dirac fermions created by a Y-shaped Kekulé distortion in graphene are investigated by the mean-field theory and the determinant…
Inverse Orbital Hall Effect Discovered from Light-Induced Terahertz Emission
Yong Xu, Fan Zhang, Yongshan Liu +5
Recent progress in orbitronics reveals the possibility of using orbit current as an information carrier. The interconversion between orbit currents and charge currents is crucial f…
Towards Systems Education for Artificial Intelligence: A Course Practice in Intelligent Computing Architectures
Jianlei Yang, Xiaopeng Gao, Weisheng Zhao
With the rapid development of artificial intelligence (AI) community, education in AI is receiving more and more attentions. There have been many AI related courses in the respects…
Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2
Xinhe Wang, Wei Yang, Wang Yang +6
The phenomenon originating from spin-orbit coupling (SOC) provides energy-efficient strategies for spin manipulation and device applications. The broken inversion symmetry interfac…
Eventor: An Efficient Event-Based Monocular Multi-View Stereo Accelerator on FPGA Platform
Mingjun Li, Jianlei Yang, Yingjie Qi +6
Event cameras are bio-inspired vision sensors that asynchronously represent pixel-level brightness changes as event streams. Event-based monocular multi-view stereo (EMVS) is a tec…
Triangle Counting Accelerations: From Algorithm to In-Memory Computing Architecture
Xueyan Wang, Jianlei Yang, Yinglin Zhao +5
Triangles are the basic substructure of networks and triangle counting (TC) has been a fundamental graph computing problem in numerous fields such as social network analysis. Never…
Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdW heterostructure
Haiyu Wang, Hao Wu, Yingjie Liu +13
The emergent two-dimensional (2D) ferromagnetic materials with unique magnetic properties have endowed great potential for next-generation spintronic devices with extraordinary mer…
Impact of Spin-Orbit Coupling on Quantum Transport in Magnetic Tunnel Junction with an anti-ferromagnetic Capping Layer
Shradha Chandrashekhar Koli, Hangyu Zhou, Jiaqi Zhou +2
Using first-principles calculations, we explore the role of an anti-ferromagnetic heavy-metal, L1-IrMn, as a capping layer in a perpendicular magnetic tunnel junction (\emph{p}…
Forecasting the outcome of spintronic experiments with Neural Ordinary Differential Equations
Xing Chen, Flavio Abreu Araujo, Mathieu Riou +6
Deep learning has an increasing impact to assist research, allowing, for example, the discovery of novel materials. Until now, however, these artificial intelligence techniques hav…
Implementing Multiple Modes of the Perpendicular Magnetization Switching within a Single Spin Orbit Torque Device
Tongxi Liu, Zhaohao Wang, Min Wang +4
Spin orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized…
Picosecond Switching of Optomagnetic Tunnel Junctions
Luding Wang, Houyi Cheng, Pingzhi Li +7
Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolut…
Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers
Luding Wang, Youri L. W. van Hees, Reinoud Lavrijsen +2
All optical switching (AOS) of the magnetization in synthetic ferrimagnetic Pt/Co/Gd stacks has received considerable interest due to its high potential towards integration with sp…
Hysteretic Mutual Synchronization of PERP-STNO Pairs Analyzed by a Generalized Pendulum-like Model
Hao-Hsuan Chen, Ching-Ming Lee, Lang Zeng +2
At present, the Kuramoto model is the standard and widely accepted theoretical approach for analyzing the synchronization of spin-torque nano-oscillators (STNOs) coupled by an inte…
Extrinsic n-type semiconductor transition in ZrSe2 with the metallic character through hafnium substitution
Zahir Muhammad, Yuliang Li, Sami Ullah +7
Two dimensional layered materials exhibit versatile electronic properties in their different phases. The intrinsic electronic properties of these materials can be modulated through…
Magnetoresistive sensors based on the elasticity of domain walls
Xueying Zhang, Nicolas Vernier, Zhiqiang Cao +4
Magnetic sensors based on the magnetoresistance effects have a promising application prospect due to their excellent sensitivity and advantages in terms of the integration. However…
Dynamics of magnetic skyrmion clusters driven by spin-polarized current with a spatially varied polarization
Wenjing Jiang, Jing Xia, Xichao Zhang +7
Magnetic skyrmions are promising candidates for future information technology. Here, we present a micromagnetic study of isolated skyrmions and skyrmion clusters in ferromagnetic n…
First-principles investigation of magnetocrystalline anisotropy oscillations in CoFeAl/Ta heterostructures
Junfeng Qiao, Shouzhong Peng, Youguang Zhang +2
We report first-principles investigations of magnetocrystalline anisotropy energy (MCAE) oscillations as a function of capping layer thickness in Heusler alloy Co\textsubscript{2}F…
Domain Wall Motion Driven by Laplace Pressure in CoFeB-MgO Nanodots with Perpendicular Anisotropy
Yu Zhang, Xueying Zhang, Nicolas Vernier +8
We have studied the magnetization reversal of CoFeB-MgO nanodots with perpendicular anisotropy for size ranging from w=400 nm to 1 μm. Contrary to previous experiments, the switchi…
Tuning the Dzyaloshinskii-Moriya Interaction in Pt/Co/MgO heterostructures through MgO thickness
Anni Cao, Xueying Zhang, Bert Koopmans +6
The interfacial Dzyaloshinskii-Moriya interaction (DMI) in the ferromagnetic/heavy metal ultra-thin film structures , has attracted a lot of attention thanks to its capability to s…
Controllable transport of a skyrmion in a ferromagnetic narrow channel with voltage-controlled magnetic anisotropy
Junlin Wang, Jing Xia, Xichao Zhang +5
Magnetic skyrmions have potential applications in next-generation spintronics devices with ultralow energy consumption. In this work, the current-driven skyrmion motion in a narrow…
Direct observation of domain wall surface tension by deflating or inflating a magnetic bubble
Xueying Zhang, Nicolas Vernier, Weisheng Zhao +3
The surface energy of a magnetic Domain Wall (DW) strongly affects its static and dynamic behaviours. However, this effect was seldom directly observed and many related phenomena h…
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
Mengxing Wang, Wenlong Cai, Kaihua Cao +11
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, s…
Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches
Yu Zhang, Xiaoyang Lin, Jean-Paul Adam +14
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies…
Ultra-fast magnetization manipulation using single femtosecond light and hot-electrons pulse
Y. Xu, M. Deb, G. Malinowski +3
Current induced magnetization manipulation is a key issue for spintronic application. Therefore, deterministic switching of the magnetization at the picoseconds timescale with a si…