Domain Wall Motion Driven by Laplace Pressure in CoFeB-MgO Nanodots with Perpendicular Anisotropy

Abstract

We have studied the magnetization reversal of CoFeB-MgO nanodots with perpendicular anisotropy for size ranging from w=400 nm to 1 μm. Contrary to previous experiments, the switching field distribution is shifted toward lower magnetic fields as the size of the elements is reduced with a mean switching field varying as 1/w. We show that this mechanism can be explained by the nucleation of a pinned magnetic domain wall (DW) at the edges of the nanodots where damages are introduced by the patterning process. As the surface tension (Laplace pressure) applied on the DW increases when reducing the size of the nanodots, we demonstrate that the depinning field to reverse the entire elements varies as 1/w. These results suggest that the presence of DWs has to be considered in the switching process of nanoscale elements and open a path toward scalable spintronic devices.

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Cited by in corpus (4)

• Controlling Domain-Wall Nucleation in Ta/CoFeB/MgO Nanomagnets via Local Ga+ Ion Irradiation
• Magnetoresistive sensors based on the elasticity of domain walls
• Micromagnetic instabilities in spin-transfer switching of perpendicular magnetic tunnel junctions
• Current controlled non-hysteresis magnetic switching in the ansence of magnetic field