Current controlled non-hysteresis magnetic switching in the ansence of magnetic field

Abstract

By means of local ion implantation, we investigated the influence of lateral interface on current-induced magnetic switching by spin-orbit torque in a perpendicularly magnetized Pt/Co/Ta multilayer. The experimental results show that, in this system, the domain wall motion under electrical current can be affected by two mechanisms: symmetry breaking and current-driven Néel wall motion at the lateral interface. The dominant mechanism is symmetry breaking (current-driven Néel wall motion) at the large (small) current. Due to the competitive relationship of these two mechanisms, the non-hysteresis effect magnetic switching without an external magnetic field is obtained. Based on the non-hysteresis effect magnetic switching, we can realize AND and OR logic gates without resetting.

References in corpus (6)

• Matching domain wall configuration and spin-orbit torques for very efficient domain-wall motion
• Deterministic magnetization switching using lateral spin-orbit torque
• Chiral symmetry breaking for deterministic switching of perpendicular magnetization by spin-orbit torque
• Complementary lateral-spin-orbit building blocks for programmable logic and in-memory computing
• Field- and current-driven magnetic domain-wall inverter and diode
• All-Linear Multistate Magnetic Switching Induced by Electrical Current