Complementary lateral-spin-orbit building blocks for programmable logic and in-memory computing
arXiv:2003.06563 · doi:10.1002/aelm.202000296
Abstract
Current-driven switching of nonvolatile spintronic materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous to conventional CMOS technology, it is important to develop a pair of complementary spin-orbit devices with differentiated magnetization switching senses as elementary building blocks for realizing sophisticated logic functionalities. Various attempts using external magnetic field or complicated stack/circuit designs have been proposed, however, plainer and more feasible approaches are still strongly desired. Here we show that a pair of two locally laser annealed perpendicular Pt/Co/Pt devices with opposite laser track configurations and thereby inverse field-free lateral spin-orbit torques (LSOTs) induced switching senses can be adopted as such complementary spin-orbit building blocks. By electrically programming the initial magnetization states (spin down/up) of each sample, four Boolean logic gates of AND, OR, NAND and NOR, as well as a spin-orbit half adder containing an XOR gate, were obtained. Moreover, various initialization-free, working current intensity-programmable stateful logic operations, including the material implication (IMP) gate, were also demonstrated by regarding the magnetization state as a logic input. Our complementary LSOT building blocks provide an applicable way towards future efficient spin logics and in-memory computing architectures.
22 pages, 4 figures
References in corpus (11)
- Spintronics: Fundamentals and applications
- Spin torque switching with the giant spin Hall effect of tantalum
- Spin Transfer Torques
- Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields
- Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure
- Determination of the Spin-Hall-Effect-Induced and the Wedged-Structure-Induced Spin Torque Efficiencies in Heterostructures with Perpendicular Magnetic Anisotropy
- Field-free magnetization reversal by spin-Hall effect and exchange bias
- Memcomputing: a computing paradigm to store and process information on the same physical platform
- Tuning a binary ferromagnet into a multi-state synapse with spin-orbit torque induced plasticity
- Deterministic magnetization switching using lateral spin-orbit torque
- Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque