593 citations · 1.1k across the 16 of their papers we have counts for
16 papers
Magneto-optical properties of textured LaSrMnO thin films integrated on silicon via a CaNbO nanosheet layer
Tomáš Maleček, Guillaume Agnus, Thomas Maroutian +7
We demonstrate the possibility of growing textured LaSrMnO (LSMO) thin films on silicon substrates with magneto-optical and optical properties comparable to hig…
Universal Fabrication of Two-Dimensional Electron Systems in Functional Oxides
Tobias Chris Rödel, Franck Fortuna, Shamashis Sengupta +9
Two-dimensional electron systems (2DESs) in functional oxides are promising for applications, but their fabrication and use, essentially limited to SrTiO-based heterostructures…
Stress measurements in silicon photonics by integrated Raman spectroscopy
Guillaume Marcaud, Mathias Berciano, Christian Lafforgue +11
Complex 3D integration of photonic and electronic integrated circuits is of particular interest to carry the photonics roadmap and to address challenges but involves mechanical str…
Highly anisotropic magnetic domain wall behavior in-plane magnetic films
Xiaochao Zhou, Nicolas Vernier, Guillaume Agnus +2
We have studied nucleation of magnetic domains and propagation of magnetic domain walls (DWs) induced by pulsed magnetic field in a ferromagnetic film with in-plane uniaxial anisot…
Magnetic domain wall motion in SrRuO thin films
Martin Zahradník, Klára Uhlířová, Thomas Maroutian +4
Influence of substrate miscut on magnetization dynamics in SrRuO (SRO) thin films was studied. Two films were grown on SrTiO substrates with high () and low…
Magneto-ionic control of spin polarization in magnetic tunnel junctions
Yingfen Wei, Sylvia Matzen, Cynthia P. Quinteros +4
Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), display…
Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers
Yingfen Wei, Sylvia Matzen, Guillaume Agnus +7
A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic device…
A rhombohedral ferroelectric phase in epitaxially-strained Hf0.5Zr0.5O2 thin films
Yingfen Wei, Pavan Nukala, Mart Salverda +10
After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appea…
Domain Wall Motion Driven by Laplace Pressure in CoFeB-MgO Nanodots with Perpendicular Anisotropy
Yu Zhang, Xueying Zhang, Nicolas Vernier +8
We have studied the magnetization reversal of CoFeB-MgO nanodots with perpendicular anisotropy for size ranging from w=400 nm to 1 μm. Contrary to previous experiments, the switchi…
Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches
Yu Zhang, Xiaoyang Lin, Jean-Paul Adam +14
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies…
Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy
Weiwei Lin, Nicolas Vernier, Guillaume Agnus +5
Electric field effects in ferromagnetic/oxide dielectric structures provide a new route to control domain wall (DW) dynamics with low power dissipation. However, electric field eff…
Measurement of magnetization using domain compressibility in CoFeB films with perpendicular anisotropy
N. Vernier, J. P. Adam, S. Eimer +5
We present a method to map the saturation magnetization of soft ultrathin films with perpendicular anisotropy, and we illustrate it to assess the compositional dependence of the ma…
Time-resolved PhotoEmission Spectroscopy on a Metal/Ferroelectric Heterostructure
J. E. Rault, G. Agnus, T. Maroutian +8
In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switchi…
Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias
J. E. Rault, G. Agnus, T. Maroutian +8
The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The…
Electric field control of domain wall logic in piezoelec-tric/ferromagnetic nanodevices
Na Lei, Thibaut Devolder, Guillaume Agnus +7
Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage…
Interfacial charge accumulation effect on magnetic domain wall nucleation and propagation in a Pt/Co/Pt/Al2O3 structure
Weiwei Lin, Nicolas Vernier, Guillaume Agnus +3
We report direct observation of charge accumulation effect on magnetization reversal in a Pt/Co(0.5 nm)/Pt(0.5 nm)/Al2O3 structure with perpendicular anisotropy. By imaging magneti…