activity
20132021
most citedUniversal Fabrication of Two-Dimensional Electron Systems in Functional Oxides

165 citations · 225 across the 4 of their papers we have counts for

collaborators

7 papers

cond-mat.str-el2021165 cited

Universal Fabrication of Two-Dimensional Electron Systems in Functional Oxides

Tobias Chris Rödel, Franck Fortuna, Shamashis Sengupta +9

Two-dimensional electron systems (2DESs) in functional oxides are promising for applications, but their fabrication and use, essentially limited to SrTiO-based heterostructures…

physics.app-ph2020

Stress measurements in silicon photonics by integrated Raman spectroscopy

Guillaume Marcaud, Mathias Berciano, Christian Lafforgue +11

Complex 3D integration of photonic and electronic integrated circuits is of particular interest to carry the photonics roadmap and to address challenges but involves mechanical str…

cond-mat.mtrl-sci2020

Highly anisotropic magnetic domain wall behavior in-plane magnetic films

Xiaochao Zhou, Nicolas Vernier, Guillaume Agnus +2

We have studied nucleation of magnetic domains and propagation of magnetic domain walls (DWs) induced by pulsed magnetic field in a ferromagnetic film with in-plane uniaxial anisot…

cond-mat.mtrl-sci201911 cited

Magnetic domain wall motion in SrRuO thin films

Martin Zahradník, Klára Uhlířová, Thomas Maroutian +4

Influence of substrate miscut on magnetization dynamics in SrRuO (SRO) thin films was studied. Two films were grown on SrTiO substrates with high () and low…

cond-mat.mtrl-sci2019

Magneto-ionic control of spin polarization in magnetic tunnel junctions

Yingfen Wei, Sylvia Matzen, Cynthia P. Quinteros +4

Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), display…

physics.app-ph2019

Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers

Yingfen Wei, Sylvia Matzen, Guillaume Agnus +7

A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic device…