593 citations · 1.1k across the 16 of their papers we have counts for
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Magneto-optical properties of textured LaSrMnO thin films integrated on silicon via a CaNbO nanosheet layer
Tomáš Maleček, Guillaume Agnus, Thomas Maroutian +7
We demonstrate the possibility of growing textured LaSrMnO (LSMO) thin films on silicon substrates with magneto-optical and optical properties comparable to hig…
Highly anisotropic magnetic domain wall behavior in-plane magnetic films
Xiaochao Zhou, Nicolas Vernier, Guillaume Agnus +2
We have studied nucleation of magnetic domains and propagation of magnetic domain walls (DWs) induced by pulsed magnetic field in a ferromagnetic film with in-plane uniaxial anisot…
Magnetic domain wall motion in SrRuO thin films
Martin Zahradník, Klára Uhlířová, Thomas Maroutian +4
Influence of substrate miscut on magnetization dynamics in SrRuO (SRO) thin films was studied. Two films were grown on SrTiO substrates with high () and low…
Magneto-ionic control of spin polarization in magnetic tunnel junctions
Yingfen Wei, Sylvia Matzen, Cynthia P. Quinteros +4
Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), display…
A rhombohedral ferroelectric phase in epitaxially-strained Hf0.5Zr0.5O2 thin films
Yingfen Wei, Pavan Nukala, Mart Salverda +10
After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appea…
Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy
Weiwei Lin, Nicolas Vernier, Guillaume Agnus +5
Electric field effects in ferromagnetic/oxide dielectric structures provide a new route to control domain wall (DW) dynamics with low power dissipation. However, electric field eff…
Time-resolved PhotoEmission Spectroscopy on a Metal/Ferroelectric Heterostructure
J. E. Rault, G. Agnus, T. Maroutian +8
In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switchi…
Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias
J. E. Rault, G. Agnus, T. Maroutian +8
The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The…
Electric field control of domain wall logic in piezoelec-tric/ferromagnetic nanodevices
Na Lei, Thibaut Devolder, Guillaume Agnus +7
Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage…
Interfacial charge accumulation effect on magnetic domain wall nucleation and propagation in a Pt/Co/Pt/Al2O3 structure
Weiwei Lin, Nicolas Vernier, Guillaume Agnus +3
We report direct observation of charge accumulation effect on magnetization reversal in a Pt/Co(0.5 nm)/Pt(0.5 nm)/Al2O3 structure with perpendicular anisotropy. By imaging magneti…