Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy
arXiv:1411.5267 · doi:10.1038/ncomms13532
Abstract
Electric field effects in ferromagnetic/oxide dielectric structures provide a new route to control domain wall (DW) dynamics with low power dissipation. However, electric field effects on DW velocities have only been observed so far in the creep regime where DW velocities are low due to strong interactions with pinning sites. Here, we show gate voltage modulation of DW velocities ranging from the creep to the flow regime in Ta/Co40Fe40B20/MgO/TiO2 structures with perpendicular magnetic anisotropy. We demonstrate a universal description of the role of applied electric fields in the various pinning dependent regimes by taking into account an effective magnetic field being linear with the electric field. In addition, the electric field effect is found to change sign in the Walker regime. Our work opens new opportunities for the study and optimization of electric field effect at ferromagnetic metal/insulator interfaces.
21 pages, 6 figures
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Cited by in corpus (6)
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- Field-free perpendicular magnetization switching through domain wall motion in Pt/Co/Cr racetracks by spin orbit torques with the assistance of accompanying Joule heating effect
- Voltage-Induced Inertial Domain Wall Motion in an Antiferromagnetic Nanowire
- Tuning the dynamics of chiral domain walls of ferrimagnetic films with the magneto-ionic effect
- Voltage-induced high-speed DW motion in a synthetic antiferromagnet