Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias

Abstract

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using X-Ray Photoelectron Spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.

9 pages, 8 figures. Submitted to Phys. Rev. B

References in corpus (6)

• The physics of dynamical atomic charges: the case of ABO3 compounds
• Lattice dynamics of BaTiO3, PbTiO3 and PbZrO3: a comparative first-principles study
• Enhancement of ferroelectricity at metal/oxide interfaces
• Ferroelectricity in ultra-thin perovskite films
• Band alignment at metal/ferroelectric interfaces: insights and artifacts from first principles
• Effect of the surface polarization in polar perovskites studied from first principles

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• Combined Spectroscopy and Electrical Characterization of La:BaSnO${}_{\text{3}}$ Thin Films and Heterostructures
• Time-resolved PhotoEmission Spectroscopy on a Metal/Ferroelectric Heterostructure