Enhancement of ferroelectricity at metal/oxide interfaces
arXiv:0811.0632 · doi:10.1038/nmat2429
Abstract
By performing first-principles calculations on four capacitor structures based on BaTiO3 and PbTiO3, we determine the intrinsic interfacial effects that are responsible for the destabilization of the polar state in thin-film ferroelectric devices. We show that, contrary to the established interpretation, the interfacial capacitance depends crucially on the local chemical environment of the interface through the force constants of the metal-oxide bonds, and is not necessarily related to the bulk screening properties of the electrode material. In particular, in the case of interfaces between AO-terminated perovskites and simple metals, we demonstrate a novel mechanism of "interfacial ferroelectricity" that produces an overall enhancement of the ferroelectric instability of the film, rather than a suppression as is usually assumed. The resulting "negative dead layer" suggests a route to thin-film ferroelectric devices that are free of deleterious size effects.
7 pages, 5 figures
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