First-Principles Modeling of Pt/LaAlO3/SrTiO3 Capacitors Under an External Bias Potential
arXiv:1112.3288 · doi:10.1103/PhysRevB.85.075426
Abstract
We study the electrical properties of Pt/LaAlO3/SrTiO3 capacitors under the action of an external bias potential, using first-principles simulations performed at constrained electric displacement field. A complete set of band diagrams, together with the relevant electrical characteristics (capacitance and built-in fields), are determined as a function of LaAlO3 thickness and the applied potential.We find that the internal field in LaAlO3 monotonically decreases with increasing thickness; hence, the occurrence of spontaneous Zener tunneling is ruled out in this system.We discuss the implications of our results in the light of recent experimental observations on biased LaAlO3/SrTiO3 junctions involving metallic top electrodes.
5 pages, 4 figures
References in corpus (7)
- Avoiding the polarization catastrophe in LaAlO3 overlayers on SrTiO3(001) through a polar distortion
- Surface defects and conduction in polar oxide heterostructures
- Origin of Metallic States at Heterointerface between Band Insulators LaAlO and SrTiO
- Band alignment at metal/ferroelectric interfaces: insights and artifacts from first principles
- First-principles modeling of electrostatically doped perovskite systems
- Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO-SrTiO Interfaces
- A simple variational method for calculating energy and quantum capacitance of an electron gas with screened interactions