Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO${}_3$-SrTiO${}_3$ Interfaces

Abstract

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO${}_3$-SrTiO${}_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.

References in corpus (3)

• Electric Field Control of the LaAlO${}_3$/SrTiO${}_3$ Interface Ground State
• Two-dimensional electron liquid state at LaAlO3-SrTiO3 interfaces
• Calculation of the Capacitances of Conductors -- Perspectives for the Optimization of Electronic Devices

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• Electronic charge redistribution in LaAlO${}_3$(001) thin films deposited at SrTiO${}_3$(001) substrate: First principles analysis and the role of stoichiometry
• Magnetism, transport, and thermodynamics in two-dimensional half-filled Hubbard superlattices
• Magnetism and nonlinear charge transport in NiFe2O4/γ-Al2O3/SrTiO3 heterostructure: Toward Spintronic Applications