Calculation of the Capacitances of Conductors -- Perspectives for the Optimization of Electronic Devices
arXiv:0902.4673 · doi:10.1063/1.3197246
Abstract
The equation describing the capacitance of capacitors is determined. It is shown that by optimizing the material of the conducting electrodes, the capacitance of capacitors reaching the quantum regime can be substantially enhanced or reduced. Dielectric capacitors with negative total capacitances are suggested and their properties analyzed. Resulting perspectives to enhance the performance of electronic devices are discussed.
References in corpus (5)
- Spin Polarization of the Low Density 3D Electron Gas
- Magnetocapacitance and exponential magnetoresistance in manganite-titanate heterojunctions
- Magnetocapacitance: A probe of spin-dependent potentials
- Doping-driven Mott transition in La_{1-x}Sr_xTiO_3 via simultaneous electron and hole doping of t2g subbands
- On the Ground State of Electron Gases at Negative Compressibility
Cited by in corpus (29)
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