Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011)
arXiv:1307.0838 · doi:10.1038/srep01876
Abstract
A central goal of electronics based on correlated materials or 'Mottronics' is the ability to switch between distinct collective states with a control voltage. Small changes in structure and charge density near a transition can tip the balance between competing phases, leading to dramatic changes in electronic and magnetic properties. In this work, we demonstrate that an electric field induced two-step ferroelastic switching pathway in (011) oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates can be used to tune the Verwey metal-insulator transition in epitaxial Fe3O4 films in a stable and reversible manner. We also observe robust non-volatile resistance switching in Fe3O4 up to room temperature, driven by ferroelastic strain. These results provides a framework for realizing non-volatile and reversible tuning of order parameters coupled to lattice-strain in epitaxial oxide heterostructures over a broad range of temperatures, with potential device applications.
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Cited by in corpus (11)
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- Unambiguous separation of the inverse spin Hall and anomalous Nernst Effects within a ferromagnetic metal using the spin Seebeck effect
- Spin Seebeck devices using local on-chip heating
- Control of the gyration dynamics of magnetic vortices by the magnetoelastic effect
- Charge order at magnetite Fe3O4(001): surface and Verwey phase transitions
- Magnetoresistance anomaly during the electrical triggering of a metal-insulator transition
- Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[ZrTi]O
- Multi-Fields Modulation of Physical Properties of Oxide Thin Films