Electric Field Control of the Verwey Transition and Induced Magnetoelectric Effect in Magnetite

Abstract

We incorporate single crystal Fe${}_3$O${}_4$ thin films into a gated device structure and demonstrate the ability to control the Verwey transition with static electric fields. The Verwey transition temperature ($T_V$) increases for both polarities of the electric field, indicating the effect is not driven by changes in carrier concentration. Energetics of induced electric polarization and/or strain within the Fe${}_3$O${}_4$ film provide a possible explanation for this behavior. Electric field control of the Verwey transition leads directly to a large magnetoelectric effect with coefficient of 585 pT m/V.

References in corpus (5)

• Origin of the magnetoelectric coupling effect in Pb(Zr0.2Ti0.8)O3/La0.8Sr0.2MnO3 multiferroic heterostructures
• Electrically-driven phase transition in magnetite nanostructures
• Terahertz Conductivity at the Verwey Transition in Magnetite
• Oscillatory Spin Polarization and Magneto-Optic Kerr Effect in Fe3O4 Thin Films on GaAs(001)
• Tailoring Interlayer Exchange Coupling of Ferromagnetic Films Across MgO with Fe Nanoclusters

Cited by in corpus (4)

• Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011)
• Facet-dependent magnon-polarons in epitaxial ferrimagnetic Fe3O4 thin films
• Strain and electric field control of magnetic and electrical transport properties in a magneto-elastically coupled Fe3O4/BaTiO3(001) heterostructure
• Mediating exchange bias by Verwey transition in CoO/Fe3O4 thin film