Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

Abstract

Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant research activity driven by its profound physics and enormous potential for application. This review article aims to provide a comprehensive review of recent progress in VCM in different thin films. We first present a brief summary of the modulation of magnetism by electric fields and describe its discovery, development, classification, mechanism, and potential applications. In the second part, we focus on the classification of VCM from the viewpoint of materials, where both the magnetic medium and dielectric gating materials, and their influences on magnetic modulation efficiency are systematically described. In the third part, the nature of VCM is discussed in detail, including the conventional mechanisms of charge, strain, and exchange coupling at the interfaces of heterostructures, as well as the emergent models of orbital reconstruction and electrochemical effect. The fourth part mainly illustrates the typical performance characteristics of VCM, and discusses, in particular, its promising application for reducing power consumption and realizing high-density memory in several device configurations. The present review concludes with a discussion of the challenges and future prospects of VCM, which will inspire more in-depth research and advance the practical applications of this field.

181 pages, 35 figures, to appear in Progress in Materials Science

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Cited by in corpus (31)

• Skyrmions in Magnetic Multilayers
• Electric-Field-Controlled Antiferromagnetic Spintronic Devices
• Piezomagnetic switching of anomalous Hall effect in an antiferromagnet at room temperature
• Antiferromagnetic Piezospintronics
• Tunneling anisotropic magnetoresistance driven by magnetic phase transition
• Electric-field control of oxygen vacancy and magnetic phase transition in cobaltite/manganite bilayer
• Magneto-electric Tuning of Pinning-Type Permanent Magnets through Atomic-Scale Engineering of Grain Boundaries
• Voltage-controlled antiferromagnetism in magnetic tunnel junctions
• Interface-enhanced ferromagnetism with long-distance effect in van der Waals semiconductor
• Nonvolatile Multilevel States in Multiferroic Tunnel Junctions
• Voltage Controlled Spin-Orbit Torque Switching in W/CoFeB/MgO
• Electric field control of RKKY coupling through solid-state ionics
• Voltage control of interface rare-earth magnetic moments
• Prediction of Magnetoelectric Multiferroic Janus Monolayers VOXY(X/Y = F, Cl, Br, or I, and X$\ne$Y) with in-plane ferroelectricity and out-of-plane piezoelectricity
• Voltage-controlled magnetism enabled by resistive switching
• Hydroxide-based magneto-ionics: electric-field control of reversible paramagnetic-to-ferromagnetic switch in $\alpha$-Co(OH)${}_2$ films
• Magnetoelectricity in two-dimensional materials
• Magneto-Ionic Vortices: Voltage-Reconfigurable Swirling-Spin Analog-Memory Nanomagnets
• Proposal for all-electrical spin manipulation and detection for a single molecule on boron-substituted graphene
• Stabilizing perpendicular magnetic anisotropy with strong exchange bias in PtMn/Co by magneto-ionics
• Voltage-control of damping constant in magnetic-insulator/topological-insulator bilayers
• Control of the magnetic anisotropy in multi-repeat Pt/Co/Al heterostructures using magneto-ionic gating
• Dual function spin-wave logic gates based on electric field control magnetic anisotropy boundary
• Electrically controllable exchange bias via interface magnetoelectric effect
• Anomalous impact of thermal fluctuations on spintransfer torque induced ferrimagnetic switching
• Giant non-volatile electric field control of proximity induced magnetism in the spin-orbit semimetal SrIrO3
• A coupled magneto-structural continuum model for multiferroic ${\mathrm{BiFeO}}_3$
• Depth Profiling of Oxygen Migration in Ta/HfO2 Stacks During Ionic Liquid Gating
• Modulation of magnetism via electric field in MgO nanoribbons
• Electrical Modulation and Probing of Antiferromagnetism in Hybrid Multiferroic Heterostructures
• Impact of spin transfer torque on the write error rate of a voltage-torque-based magnetoresistive random access memory