Interface effects at a half-metal/ferroelectric junction
arXiv:0707.1665 · doi:10.1063/1.2767776
Abstract
Magnetoelectric effects are investigated ab-initio at the interface between half-metallic and ferroelectric prototypes: Heusler CoMnSi and perovskite BaTiO. For the Co-termination ferroelectricity develops in BaTiO down to nanometer thicknesses, whereas for the MnSi-termination a paraelectric and a ferroelectric state energetically compete, calling for a full experimental control over the junction atomic configuration whenever a ferroelectric barrier is needed. Switch of the electric polarization largely affects magnetism in CoMnSi, with magnetoelectric coupling due to electronic hybridization at the MnSi termination and to structural effects at the Co-termination. Half-metallicity is lost at the interface, but recovered already in the subsurface layer.
4 pages, 3figures, accepted for publication in Appl. Phys. Lett
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